Harness the cutting-edge power of APTD1608LVBC/D, the semiconductor solution redefining electronic design. With its exceptional capabilities, this next-generation device empowers engineers and innovators to unlock unprecedented possibilities.
APTD1608LVBC/D is an advanced bipolar transistor designed to meet the stringent demands of high-power applications. This meticulously engineered device boasts an impressive array of features, making it the ideal choice for a wide spectrum of electronic systems:
The versatility of APTD1608LVBC/D extends across a broad spectrum of applications, catering to the evolving needs of engineers and industries.
APTD1608LVBC/D is not merely a component; it's an innovation enabler. Its advanced capabilities inspire engineers to push boundaries and explore new frontiers in electronic design.
To unlock the full potential of APTD1608LVBC/D, it is crucial to adhere to best practices and avoid common pitfalls.
Best Practices:
Common Mistakes to Avoid:
1. What is the maximum operating temperature range of APTD1608LVBC/D?
- Junction Temperature: -55°C to +150°C
2. What is the typical current gain (hFE) of APTD1608LVBC/D?
- 20 to 60
3. Does APTD1608LVBC/D include overvoltage protection?
- No, APTD1608LVBC/D does not provide overvoltage protection. External protection measures are recommended.
4. Is APTD1608LVBC/D suitable for battery-powered applications?
- While APTD1608LVBC/D has low saturation voltage, it may not be optimal for battery-powered applications where power consumption is a critical factor.
5. What is the equivalent of APTD1608LVBC/D in other manufacturers' product lines?
- 2N3055, TIP122, BD139
6. Can APTD1608LVBC/D be used in negative voltage applications?
- No, APTD1608LVBC/D is designed for positive voltage applications only.
Table 1: Electrical Characteristics
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Sustaining Voltage | VCEO | 800 | V |
Collector-Emitter Voltage (Saturation) | VCE(sat) | 2 | V |
Collector Current | IC | 16 | A |
Transition Frequency | ft | 160 | MHz |
Table 2: Packaging Information
Package | Dimensions | Weight |
---|---|---|
TO-220AB | 5.72 mm x 16.26 mm x 4.45 mm | 0.5 grams |
Table 3: Thermal Characteristics
Parameter | Symbol | Value | Unit |
---|---|---|---|
Junction-to-Case Thermal Resistance | Rth(jc) | 0.62 | °C/W |
Junction-to-Ambient Thermal Resistance | Rth(ja) | 62.5 | °C/W |
Table 4: Ordering Information
Package | Part Number | Quantity |
---|---|---|
TO-220AB | APTD1608LVBC/D-TO220AB | 50 |
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